Contactless monitoring of impurity activation in ion‐implanted silicon by surface acoustic wave techniques
作者:
K. Varahramyan,
R. T. Webster,
P. Das,
R. Bharat,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 2
页码: 1234-1237
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327693
出版商: AIP
数据来源: AIP
摘要:
The interaction between an implanted layer in silicon and a surface acoustic wave (SAW) traveling on a neighboring piezoelectric was studied, and the resulting transverse acoustoelectric voltage has been found to be an effective indicator of the activation of the implanted species in the silicon lattice obtained during annealing treatments following ion implantation. The method can be used to monitor an entire wafer and is nondestructive.
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