Using thermally stimulated currents to visualize defect clusters in neutron‐irradiated silicon
作者:
M. Bruzzi,
E. Borchi,
A. Baldini,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 9
页码: 4007-4013
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.352253
出版商: AIP
数据来源: AIP
摘要:
Siliconp+njunctions irradiated with fast‐neutron fluences (5×1011–5×1013neutrons/cm2) have been experimentally measured using the thermally stimulated current technique. When forward filling voltages are applied, a new peak is found in samples irradiated with fluences greater than 5.6×1011. A cluster model has been developed to describe the new peak and the cluster’s dimensions and defect concentrations have been evaluated.
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