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GaAs micrometer‐sized dot imaging by Raman microscopy

 

作者: P. D. Wang,   C. Cheng,   C. M. Sotomayor Torres,   D. N. Batchelder,  

 

期刊: Journal of Applied Physics  （AIP Available online 1993）
卷期: Volume 74, issue 9  

页码: 5907-5909

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.354170

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have studied III‐V semiconductor dot samples with Raman microscopy. The samples were fabricated by electron beam lithography and dry etching. The non‐resonant Raman scattering can provide direct information on the structure alteration and associated phonon bands. Direct Raman band imaging reveals the uniformity of the GaAs micrometer‐sized dot arrays.

 

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