Knife‐edge thin film field emission cathodes on (110) silicon wafers
作者:
Bo Lee,
T. S. Elliott,
T. K. Mazumdar,
P. M. McIntyre,
Y. Pang,
H. J. Trost,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 2
页码: 644-647
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587404
出版商: American Vacuum Society
关键词: SILICON;THIN FILMS;FIELD EMISSION;ELECTRON SOURCES;CATHODES;FABRICATION;FOWLER−NORDHEIM THEORY;TESTING;Si
数据来源: AIP
摘要:
In the effort to develop a high performance field emission cathode for application in microwave amplifiers, it is clear that the emitter structure should have a sharp emitter surface, a large emitter height, a small gate opening size, and a small emitter angle. We have developed a technique that fabricates knife‐edge field emission arrays (KEFEA) on (110) silicon wafers. KEFEA has an optimized structure meeting the requirements mentioned above. The emitter edge radius is about 250 Å or less, the emitter height is 8 μm, and the gate gap is ∼0.2 μm. Experiments have exhibited Fowler–Nordheim type field emission with gate‐to‐substrate bias voltage less than 50 V.
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