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Ferroelectric properties of (PbxLa1−x)(ZryTi1−y)O3films prepared by two-step pulsed laser deposition process

 

作者: Hsiu-Fung Cheng,   Kuo-Shung Liu,   Yu-Jen Chen,   Gwo Jamn,   I-Nan Lin,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1999）
卷期: Volume 26, issue 1-4  

页码: 1-8

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908215604

 

出版商: Taylor & Francis Group

 

关键词: ferroelectric thin films;modified PLD;buffer layer;PLZT

 

数据来源: Taylor

 

摘要:

A two-step pulsed laser deposition process has been successfully applied for growing the (PbxLa1−x)(ZryTi1−y) O3, PLZT, thin films. These films exhibit good ferroelectric characteristics (Pr=18 μC/cm2;Ec=80 kV/cm;JL≤0.2 μA/cm2), whenever crystalline SrRuO3materials were used as buffer layers. However, the electrical properties of PLZT films were markedly degraded whenever the amorphous SrRuO3or (La0.5Sr0.5)CoO3layer was used as buffer layer.

 

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