Excitonic recombination in GaN grown by molecular beam epitaxy
作者:
M. Smith,
G. D. Chen,
J. Z. Li,
J. Y. Lin,
H. X. Jiang,
A. Salvador,
W. K. Kim,
O. Aktas,
A. Botchkarev,
H. Morkoc¸,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 23
页码: 3387-3389
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114902
出版商: AIP
数据来源: AIP
摘要:
Time‐resolved photoluminescence has been employed to probe the free‐excitonic transitions and their dynamic processes in GaN grown by molecular beam epitaxy (MBE). The exciton photoluminescence spectral line shape, quantum yield, and recombination lifetimes have been measured at different excitation intensities and temperatures, from which the binding energy of an exciton, the energy band gap, and the free‐exciton radiative recombination lifetimes of GaN grown by MBE have been obtained. Our results have demonstrated the superior crystalline quality as well as ultrahigh purity of the investigated sample, implying a new major breakthrough in MBE growth technologies for GaN. ©1995 American Institute of Physics.
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