Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition
作者:
J. F. M. Cillessen,
M. W. J. Prins,
R. M. Wolf,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 6
页码: 2777-2783
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.363961
出版商: AIP
数据来源: AIP
摘要:
Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3sandwiched between La0.5Sr0.5CoO3electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field(Ec)which is comparable with values for bulk ceramics. Textured thin-film capacitors with a columnar microstructure show lower switching voltages than epitaxial films. No thickness dependence ofEcand a good endurance up to 1011cycles have been observed for epitaxial as well as textured capacitors with oxidic electrodes. In contrast, capacitors with a metallic top electrode show an increase ofEcwith decreasing thickness of the ferroelectric layer. We show that charge injection can explain the experimentally observed increase ofEcwith decreasing ferroelectric layer thickness. An overview is given of the growth conditions needed for PbZr0.53Ti0.47O3films, because the precise stoichiometry is of the utmost importance for the capacitor quality. ©1997 American Institute of Physics.
点击下载:
PDF
(126KB)
返 回