Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular‐beam epitaxial growth of InGaAs single quantum wells on GaAs

 

作者: D. C. Radulescu,   W. J. Schaff,   L. F. Eastman,   J. M. Ballingall,   G. O. Ramseyer,   S. D. Hersee,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 1  

页码: 111-115

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584432

 

出版商: American Vacuum Society

 

关键词: MOLECULAR BEAM EPITAXY;EPITAXIAL LAYERS;GALLIUM ARSENIDES;INDIUM ARSENIDES;FILM GROWTH;QUANTUM WELL STRUCTURES;THICKNESS;SURFACE RECONSTRUCTION;AUGER ELECTRON SPECTROSCOPY;TEMPERATURE EFFECTS;CHEMICAL COMPOSITION;THIN FILMS;GaAs;(Ga,In)As

 

数据来源: AIP

 

摘要:

 

点击下载:  PDF (565KB)

返 回