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Strain‐induced lateral confinement of excitons in GaAs/AlGaAs quantum well by chemical dry etching

 

作者: I.‐H. Tan,   D. G. Lishan,   R. Mirin,   V. Jayaraman,   T. Yasuda,   C. B. Prater,   E. L. Hu,   J. E. Bowers,   P. K. Hansma,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 6  

页码: 3498-3501

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585831

 

出版商: American Vacuum Society

 

关键词: EXCITONS;ETCHING;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;QUANTUM WELL STRUCTURES;STRAINS;PHOTOLUMINESCENCE;INDIUM ARSENIDES;ATOMIC FORCE MICROSCOPY;HYDROCHLORIC ACID;LITHOGRAPHY;QUASI−BINARY COMPOUNDS;GaAs;(AlGa)As;(InGa)As

 

数据来源: AIP

 

摘要:

HCl radical beam etching has been used to produce strain‐induced lateral confinement of excitons in a GaAs quantum well. This confinement was generated by etching a grating pattern into a strained layer of In0.35Ga0.65As which overlies the GaAs quantum well. Atomic force microscopy was used to examine the etched surface morphology. Photoluminescence and excitation photoluminescence spectroscopy were used to detect the optical transitions. The after‐etch photoluminescence intensity and the systematic peak shift with etch time indicate the degree of control and low‐damage nature of the etch process used.

 

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