Silicon nitride formation from a silane–nitrogen electron cyclotron resonance plasma
作者:
J. C. Barbour,
H. J. Stein,
O. A. Popov,
M. Yoder,
C. A. Outten,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1991)
卷期:
Volume 9,
issue 3
页码: 480-484
ISSN:0734-2101
年代: 1991
DOI:10.1116/1.577392
出版商: American Vacuum Society
关键词: SILICON NITRIDES;FILMS;CHEMICAL VAPOR DEPOSITION;PLASMA;ELECTRON CYCLOTRON−RESONANCE;SILANES;NITROGEN;MIXTURES;QUANTITY RATIO;RUTHERFORD SCATTERING;INFRARED SPECTRA;ABSORPTION SPECTRA;RBS;OXYNITRIDES;Si3N4
数据来源: AIP
摘要:
Good quality, low temperature silicon nitride and oxynitride films were deposited downstream from an electron cyclotron resonance (ECR) plasma source using SiH4and N2gas mixtures. The Si/N ratio and H content in the deposited films were determined using Rutherford backscattering spectrometry and elastic recoil detection. The H concentration was minimum for films with compositions closest to that of stoichiometric Si3N4. The optimum conditions for producing a stoichiometric Si3N4were a SiH4/N2flow ratio between 0.1 and 0.2, and an electrically isolated sample far from the ECR source. Infrared absorption spectra showed that as the film composition changed from N rich to Si rich the dominant bonds associated with H changed from N–H to Si–H.
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