Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
作者:
S. Maimon,
E. Finkman,
G. Bahir,
S. E. Schacham,
J. M. Garcia,
P. M. Petroff,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 14
页码: 2003-2005
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122349
出版商: AIP
数据来源: AIP
摘要:
Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were implemented, composed of ten layers of self-assembled InAs dots grown on GaAs substrate. Low temperature spectral response shows two peaks at low bias, and three at a high one, polarized differently. The electronic level structure is determined, based on polarization, bias, and temperature dependence of the transitions. Although absorbance was not observed, a photoconductive signal was recorded. This may be attributed to a large photoconductive gain due to a relatively long lifetime, which indicates, in turn, a reduced generation rate. ©1998 American Institute of Physics.
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