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Noise characteristics of a cryogenically cooled GaAs metal semiconductor field effect transistor at 4 MHz

 

作者: Mark F. Bocko,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1984）
卷期: Volume 55, issue 2  

页码: 256-257

 

ISSN:0034-6748

 

年代: 1984

 

DOI:10.1063/1.1137737

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The noise near 4 MHz of a cryogenically cooled GaAs metal semiconductor field effect transitor (MESFET) has been measured. The input noise current isiN=1.1±0.2×10−14A/(Hz)1/2and the additive voltage noise iseN=1.2±0.4×10−9V/(Hz)1/2, which gives a noise temperatureTN=0.5 K.

 

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