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Planarizing of phosphosilicate glass films on patterned silicon wafers

 

作者: L. F. Johnson,   K. A. Ingersoll,   J. V. Dalton,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 2  

页码: 487-489

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582631

 

出版商: American Vacuum Society

 

关键词: silicon;glass;etching;ion beams;argon ions;resolution;fabrication;line widths;planar configuration;vlsi;incidence angle;collisions;ion collisions;coatings;surface coating;metallization

 

数据来源: AIP

 

摘要:

Patterned silicon wafers covered with both flowed and nonflowed phosphosilicate glass films have been planarized by argon ion‐beam etching. At the optimum planarizing angle of 50°, the nonflowed PSG surface, with 1 μm high topography, is transformed to a flat surface with maximum deviations from planarity of<500 Å. The technique should alleviate resolution, linewidth control, and metallization coverage problems in very large scale integrated circuit fabrication.

 

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