首页   按字顺浏览 期刊浏览 卷期浏览 Cryogenic scanning probe characterization of semiconductor nanostructures
Cryogenic scanning probe characterization of semiconductor nanostructures

 

作者: M. A. Eriksson,   R. G. Beck,   M. Topinka,   J. A. Katine,   R. M. Westervelt,   K. L. Campman,   A. C. Gossard,  

 

期刊: Applied Physics Letters  (AIP Available online 1996)
卷期: Volume 69, issue 5  

页码: 671-673

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.117801

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We demonstrate the use of a scanned probe microscope (SPM) at 4 Kelvin to study electron transport through a ballistic point contact in the two‐dimensional electron gas inside a GaAs/AlGaAs heterostructure. The electron gas density profile is locally perturbed by the charged SPM tip providing information about the electron flow through the point contact. As the tip is scanned, one obtains a spatial image of the ballistic electron flux as well as the topographic profile of the structure. Calculations indicate the spatial resolution is comparable to the electron gas depth. ©1996 American Institute of Physics.

 

点击下载:  PDF (106KB)



返 回