Relationship between resistivity and phosphorus concentration in silicon
作者:
F. Mousty,
P. Ostoja,
L. Passari,
期刊:
Journal of Applied Physics
(AIP Available online 1974)
卷期:
Volume 45,
issue 10
页码: 4576-4580
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1663091
出版商: AIP
数据来源: AIP
摘要:
Accurate electrical and analytical measurements allowed us to determine a relationship between resistivity and phosphorus concentration in doped silicon. This relationship is compared with that obtained by other authors in the case ofn‐type silicon, and the differences due to the various doping agents are discussed. Differences between concentrations determined by analytical techniques and by Hall effect measurements are reported.
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