Electronic states in ZnSe/ZnTe type-II superlattice studied by capacitance transient spectroscopy
作者:
S. Q. Wang,
F. Lu,
H. D. Jung,
C. D. Song,
Z. Q. Zhu,
H. Okushi,
B. C. Cavenett,
T. Yao,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 7
页码: 3402-3407
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365655
出版商: AIP
数据来源: AIP
摘要:
We have studied the electronic states in N-doped ZnSe/ZnTe type-II superlattice (SL) by deep level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy (ICTS). The capture and emission processes of holes between a miniband of the SL and the valence band of ZnSe barrier were investigated. From the analysis of DLTS and ICTS spectra, the activation energy for the hole emission from the miniband energy level was determined to be0.28±0.03 eV,which is consistent with a theoretical value (0.25 eV) of the band offset between the ZnSe/ZnTe SL calculated based on the Kronig–Penney model. A deep level with an activation energy of0.48±0.03 eVwas observed and has been assumed to originate from an interface defect in the SL region. A deep level located at0.54±0.03 eVabove the valence band of ZnSe was also observed in the ZnSe capping layer. ©1997 American Institute of Physics.
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