Silicon vacuum microdiode with on‐chip anode
作者:
Yeong J. Yoon,
Yicheng Lu,
B. Lalevic,
Robert J. Zeto,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 2
页码: 648-651
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587405
出版商: American Vacuum Society
关键词: SILICON DIODES;MICROELECTRONICS;MULTILAYERS;ALUMINIUM;BINARY COMPOUNDS;TUNGSTEN COMPOUNDS;TITANIUM COMPOUNDS;AVALANCHE DIODES;FABRICATION;IV CHARACTERISTIC;FIELD EMISSION;Si;Al;TiW
数据来源: AIP
摘要:
A vacuum microdiode was fabricated with a silicon avalanche cathode and an on‐chip microanode. The image reverse process followed by proper heat treatment was employed to form a photoresist sacrificial layer in shaping a microanode. The distance of ∼3 μm between cathode and anode was achieved by adjusting the number of depositions of photoresist. On the top of the sacrificial layer, a multilayer (Al/TiW/Al) structure was deposited, which provided the microanode with good conductivity and mechanical strength. The dimension of the microanode was 8 (or 18) μm in width and more than 30 μm in length. TheI–Vcharacteristics of this vertical‐type microdiode demonstrated the enhancement of current emission due to a strong electric field at relatively low anode voltages.
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