The valence band alignment at ultrathin SiO2/Si interfaces
作者:
J. L. Alay,
M. Hirose,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 3
页码: 1606-1608
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.363895
出版商: AIP
数据来源: AIP
摘要:
High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6–4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface. ©1997 American Institute of Physics.
点击下载:
PDF
(54KB)
返 回