Kinetics of silicide formation by thin films of V on Si and SiO2substrates
作者:
H. Kra¨utle,
M‐A. Nicolet,
J. W. Mayer,
期刊:
Journal of Applied Physics
(AIP Available online 1974)
卷期:
Volume 45,
issue 8
页码: 3304-3308
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1663776
出版商: AIP
数据来源: AIP
摘要:
The reaction rate of vacuum‐evaporated films of V of the order of 1000 Å thick is investigated by MeV He backscattering spectrometry. On substrates of single‐crystal Si and for anneal times up to several hours in the temperature range 570–650°C, VSi2is formed at a linear rate in time. The activation energy of the process is 1.7±0.2 eV. The presence of oxygen in amounts of 10% can significantly decelerate the reaction. On substrates of SiO2in the temperature range 730–820°C and anneal times of several hours or less, V3Si is formed at a square‐root rate in time. The activation energy of this process is 2.0±0.2 eV.
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