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Room‐temperature InAsxSbyP1−x−ylight‐emitting diodes for CO2detection at 4.2 &mgr;m

 

作者: A. Krier,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 24  

页码: 2428-2429

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102899

 

出版商: AIP

 

数据来源: AIP

 

摘要:

By using a graded composition InAsSbP quaternary layer grown by liquid phase epitaxy it was possible to fabricate light‐emitting diodes which emit near 4.2 &mgr;m at room temperature, corresponding to the fundamental absorption of CO2gas.

 

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