The achievement of high-quality continuous polycrystalline silicon (poly-Si) layers onto glass substrates by using aluminum-induced crystallization is reported. The crystallization behavior of dc sputtered amorphous silicon on glass induced by an Al interface layer has been investigated above and below the eutectic temperature of 577 °C. Secondary electron micrographs in combination with energy-dispersive x-ray microanalysis show that annealing below this temperature leads to the juxtaposed Al and Si layers exchanging places. The newly formed poly-Si layer is fully crystallized and of good crystalline quality, according to Raman spectroscopy and transmission electron microscopy investigations. At 500 °C, the time needed to crystallize a 500-nm-thick Si layer is as short as 30 min. By annealing above the eutectic temperatures, layer exchange is not as pronounced and the newly formed Al layer is found to contain a network of crystallized Si. ©1998 American Institute of Physics.