Ferroelectric SrBi2Ta2O9thin films deposited by liquid injection MOCVD using novel bimetallic alkoxide precursor
作者:
Woong-chul Shin,
Kyu-jeong Choi,
Eun-suck Choi,
Chong-man Park,
Soon-gil Yoon,
期刊:
Integrated Ferroelectrics
(Taylor Available online 2000)
卷期:
Volume 30,
issue 1-4
页码: 27-36
ISSN:1058-4587
年代: 2000
DOI:10.1080/10584580008222250
出版商: Taylor & Francis Group
关键词: ferroelectric;liquid injection MOCVD;single-mixture solution
数据来源: Taylor
摘要:
The ferroelectric SBT films were deposited on Pt/Ti/SiO2/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)5(dmae)]2and Bi(C6H5)3. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 400°C, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5∼1.0. As-deposited film was amorphous. However, after annealing at 750°C for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 750°C were 4.7 μC/cm2and 115.7 kV/cm at an applied voltage of 5 V, respectively. The SBT films annealed at 750°C showed practically no polarization fatigue up to 1010switching cycles.
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