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Liquid‐phase‐epitaxial growth of lattice‐matched In0.53Ga0.47As on (100) ‐oriented InP

 

作者: S. B. Hyder,   G. A. Antypas,   J. S. Escher,   P. E. Gregory,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 31, issue 9  

页码: 551-553

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89803

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Growth of InGaAs lattice matched to InP was achieved for the first time on the (100) orientation of InP by liquid‐phase epitaxy. Growth conditions and melt composition for such a growth are presented. In0.53Ga0.47As/InP and InP/In0.53Ga0.47As/InP heterojunction structures for 1.7‐&mgr;m field‐assisted photocathodes have also been fabricated on (100) InP substrates.

 

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