Si/&Dgr; layer in GaAs(001): Its effect on the crystal structure and roughness of the GaAs cap layer
作者:
Norene Lucas,
Hartmut Zabel,
Hadis Morkoc¸,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 1
页码: 227-230
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365802
出版商: AIP
数据来源: AIP
摘要:
We have investigated structural properties of GaAs grown on top of a pseudomorphic Si interlayer deposited on a GaAs substrate by x-ray reflectivity and Bragg scattering. The surface and interface roughness of the 500-Å thick GaAs overlayer depends critically on the thickness of the Si interlayer. The surface roughness increases from roughly 10 to 40 Å when the Si thicknesses increases from 3 to 5 Å, whereas the interface roughness remains roughly constant for Si thicknesses larger than 9 Å. The Laue oscillation of the GaAs(004) Bragg reflection together with the asymmetry of the intensity allow a precise determination of the pseudomorphic Si interlayer. ©1997 American Institute of Physics.
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