Thin films of BaxSryTi1−x−yoxide where x+y <0.5 have been prepared by CVD on Pt coated substrates. Within the above composition space there exist compositions of BST which optimize the tradeoff between large capacitance per unit area and small dependence on applied DC voltage. Such films would be useful as on-chip capacitors where intermodulation distortion or harmonic distortion must be minimized. Capacitance densities > 15 fF/mum2and a2coefficients < 100ppm/(volt)2with low leakage and low loss have been obtained.