首页   按字顺浏览 期刊浏览 卷期浏览 Nitrogen in silicon: Towards the identification of the 1.1223‐eV (A,B,C) photolu...
Nitrogen in silicon: Towards the identification of the 1.1223‐eV (A,B,C) photoluminescence lines

 

作者: R. Sauer,   J. Weber,   W. Zulehner,  

 

期刊: Applied Physics Letters  (AIP Available online 1984)
卷期: Volume 44, issue 4  

页码: 440-442

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94759

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We show that the ‘‘new’’ photoluminescence line in silicon at 1.1223 eV which was recently reported and ascribed to a nitrogen complex is identical with theAline of the isoelectronicA,B,Cexciton system as previously studied. New data are presented which confirm that nitrogen is incorporated in the optical center. Further defect constituents cannot be identified on the basis of the present data.

 

点击下载:  PDF (220KB)



返 回