Nitrogen in silicon: Towards the identification of the 1.1223‐eV (A,B,C) photoluminescence lines
作者:
R. Sauer,
J. Weber,
W. Zulehner,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 4
页码: 440-442
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94759
出版商: AIP
数据来源: AIP
摘要:
We show that the ‘‘new’’ photoluminescence line in silicon at 1.1223 eV which was recently reported and ascribed to a nitrogen complex is identical with theAline of the isoelectronicA,B,Cexciton system as previously studied. New data are presented which confirm that nitrogen is incorporated in the optical center. Further defect constituents cannot be identified on the basis of the present data.
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