Anneal technique to recover the electrical characteristics of the packaged bipolar junction transistors damaged by Co‐60 radiation
作者:
Kuei‐Shu Chang‐Liao,
Ching‐Ju Huang,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 3
页码: 1377-1383
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587302
出版商: American Vacuum Society
关键词: ANNEALING;BIPOLAR TRANSISTORS;PHYSICAL RADIATION EFFECTS;GAMMA RADIATION;COBALT 60
数据来源: AIP
摘要:
Radiation‐induced degradation in packaged bipolar junction transistors (BJT) can be efficiently removed by an anneal treatment carried out at 400 °C for 12 min in N2. The electrical characteristics of BJTs including current gain β, base currentIB, and collector currentICwere examined in the recovery of device performance. The radiation was performed by a Co‐60 (γ‐ray) source with the total doses ranging from 10 K rad to 10 M rad. The determinations of anneal temperature and anneal time were also discussed. It was shown that this anneal treatment did not degrade the radiation and hot‐carrier hardnesses of devices.
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