Molecular level fabrication techniques and molecular electronic devices
作者:
Forrest L. Carter,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1983)
卷期:
Volume 1,
issue 4
页码: 959-968
ISSN:0734-211X
年代: 1983
DOI:10.1116/1.582717
出版商: American Vacuum Society
关键词: fabrication;switching;switches;electronic equipment;molecules;lithography;microelectronics
数据来源: AIP
摘要:
In anticipation of the continued size reduction of switching elements to the molecular level, new approaches to materials, memory, and switching elements have been developed. Two of the three most promising switching phenomena include electron tunneling in short periodic arrays and soliton switching in conjugated systems. Assuming a three‐dimensional architecture, the element density can range from 1015to 1018per cc. In order to make the fabrication of such a molecular electronic device computer feasible, techniques for accomplishing lithography at the molecular scale must be devised. Three approaches possibly involving biological and Langmiur–Blodgett materials are described.
点击下载:
PDF
(1082KB)
返 回