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Molecular level fabrication techniques and molecular electronic devices

 

作者: Forrest L. Carter,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1983)
卷期: Volume 1, issue 4  

页码: 959-968

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582717

 

出版商: American Vacuum Society

 

关键词: fabrication;switching;switches;electronic equipment;molecules;lithography;microelectronics

 

数据来源: AIP

 

摘要:

In anticipation of the continued size reduction of switching elements to the molecular level, new approaches to materials, memory, and switching elements have been developed. Two of the three most promising switching phenomena include electron tunneling in short periodic arrays and soliton switching in conjugated systems. Assuming a three‐dimensional architecture, the element density can range from 1015to 1018per cc. In order to make the fabrication of such a molecular electronic device computer feasible, techniques for accomplishing lithography at the molecular scale must be devised. Three approaches possibly involving biological and Langmiur–Blodgett materials are described.

 

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