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Interface structure of fcc Mn on GaAs(001)

 

作者: X. Jin,   Yong Chen,   X. W. Lin,   D. S. Dong,   Yan Chen,   M. Xu,   W. R. Zhu,   Xun Wang,   X. L. Shen,   L. Li,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 18  

页码: 2455-2457

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118854

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Temperature dependent growth of Mn on GaAs(001) and their interface structure have been studied. At 400 K, fcc Mn grows epitaxially on GaAs and a“Mn2As-type” Mn–Ga–As mixed layer sandwiched between the fcc Mn and GaAs(001) is observed. It is this transition layer that plays a critical role in the stabilization of the metastable fcc-Mn-phase on GaAs(001).©1997 American Institute of Physics.

 

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