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The IR studies of hydrogen-defect-impurity complexes in c-Si grown in hydrogen atmosphere

 

作者: T.S. Shi,   G.R. Bai,   M.W. Qi,   L.M. Xie,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1989）
卷期: Volume 111-112, issue 1-2  

页码: 369-374

 

ISSN:1042-0150

 

年代: 1989

 

DOI:10.1080/10420158908213009

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Based upon the results of studying the SiH IR bands in the float zone silicon crystal grown in hydrogen atmosphere (FZ-Si:H) some information about the H-defect-impurity complexes in the as-grown FZ-Si:H are summarized and presented.

 

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