Disorder production and annealing during He Ion RBS/channelling analysis of InP
作者:
Zhang Tong He,
G. Carter,
期刊:
Radiation Effects
(Taylor Available online 1983)
卷期:
Volume 77,
issue 1-2
页码: 97-105
ISSN:0033-7579
年代: 1983
DOI:10.1080/00337578308224726
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Studies of the interaction of 2 MeV He+ ions, employed for Rutherford backscattering/channeiling of disorder in InP, with the disorder generated by pre-implantation of 40 keV N+ ions at room temperature are reported. It is shown that for initially undamaged substrates, He+ irradiation generates disorder whilst for N+ implantation damaged substrates He+ irradiation anneals disorder. Possible mechanisms to account for this behaviour are discussed and the potential problem associated with accurate disorder measurements using RBS/channelling outlined.
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