Minority electron lifetimes in heavily dopedp‐type GaAs grown by molecular beam epitaxy
作者:
Hiroshi Ito,
Tomofumi Furuta,
Tadao Ishibashi,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 25
页码: 2936-2938
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104727
出版商: AIP
数据来源: AIP
摘要:
Minority electron lifetimes in molecular beam epitaxy grown Be‐dopedp‐type GaAs are characterized systematically. Samples grown at temperatures from 550 to 700 °C have hole concentrations from 1017to 1020cm−3. Although electron lifetime in samples grown at temperatures higher than 650 °C remains nearly constant for each free‐carrier concentration, it decreases significantly at lower growth temperatures. These tendencies are observed in common for various hole concentrations. These results can be explained in terms of an increase in nonradiative recombination centers incorporated during growth.
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