Effect of annealing on the defect structure ina‐SiC:H films
作者:
T. Friessnegg,
M. Boudreau,
J. Brown,
P. Mascher,
P. J. Simpson,
W. Puff,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 4
页码: 2216-2223
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363049
出版商: AIP
数据来源: AIP
摘要:
The annealing behavior of amorphous, hydrogenated silicon carbide films in the range 400–900 °C was studied by optical characterization methods,15N hydrogen profiling, and defect profiling using a variable energy positron beam. The films were deposited in an electron cyclotron resonance chemical vapor deposition system using ditertiary butyl silane [SiH2(C4H9)2] as the monosource for silicon and carbon. As‐deposited films were found to contain large concentrations of hydrogen, both bonded and unbonded. Under rapid thermal annealing in a N2atmosphere, the bonded hydrogen effuses giving rise to additional Si–C bond formation and to film densification. After annealing at high temperatures in N2, a marked decrease in the total hydrogen content is observed. After annealing in vacuum, however, the hydrogen effusion promotes void formation in the films. ©1996 American Institute of Physics.
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