Indium distribution in InGaAs quantum wires observed with the scanning tunneling microscope
作者:
M. Pfister,
M. B. Johnson,
S. F. Alvarado,
H. W. M. Salemink,
U. Marti,
D. Martin,
F. Morier‐Genoud,
F. K. Reinhart,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 10
页码: 1459-1461
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114494
出版商: AIP
数据来源: AIP
摘要:
The incorporation of In in the growth of crescent‐shaped In0.12Ga0.88As quantum wires embedded in (AlAs)4(GaAs)8superlattice barriers is studied in atomic detail using cross‐sectional scanning tunneling microscopy. It is found that the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty‐ and filled‐state images, respectively. Strong In segregation is seen at the InGaAs/GaAs interfaces, but neither an expected enhancement of the In concentration at the center of the quantum wire compared to the planar quantum well nor In clustering beyond the statistical expectation is observed. ©1995 American Institute of Physics.
点击下载:
PDF
(338KB)
返 回