Raman investigation with excitation of various wavelength lasers on porous silicon
作者:
Shu‐Lin Zhang,
Yongtian Hou,
Kuok‐San Ho,
Bidong Qian,
Shengmin Cai,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 9
页码: 4469-4471
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.352178
出版商: AIP
数据来源: AIP
摘要:
By varying the incident laser wavelength, the intrinsic Raman spectrum of porous silicon formed on nondegeneratep‐type silicon is identified and used to determine the dependence of the average pore size and porosity on the depth of the porous silicon layer. It is found that with increasing layer depth, the average pore size and porosity decreases, which is contrary to that of porous silicon formed on degeneraten‐type silicon. This may indicate a different formation mechanism for these two types of porous silicon.
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