Interface trap density distributions within Si for metal–bismuth titanate–silicon capacitors fabricated by chemical solution deposition were investigated. The interface trap density was measured by a conductance technique at room temperature and a value in the order of1011–1012 eV−1 cm−2was found depending on the ferroelectric crystallization temperature. An increase in the annealing temperature results in an increase in the interface trap density. ©1998 American Institute of Physics.