GaInAs/GaAs thermally actuated optical switch
作者:
L. D. Partain,
J. C. Schultz,
G. F. Virshup,
M. Ladle Ristow,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 18
页码: 1840-1842
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.104033
出版商: AIP
数据来源: AIP
摘要:
A Ga0.8In0.2As/GaAs thermally actuated optical switch has been demonstrated for unpolarized 1.08 &mgr;m light. Its measuredon:offcontrast ratio of 4.7 was produced electrically by changing the applied voltage from 0 to 3.2 V on a device with a 2.25‐&mgr;m‐thick Ga0.8In0.2As active layer. The ‘‘on’’ insertion loss was 3.8 dB. Theon:offchange in Ga0.8In0.2As absorption coefficient was 6660 cm−1. The switching current density was 9.7 A/cm2. The thermal switching energy can be supplied optically for an all‐optical switch.
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