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GaInAs/GaAs thermally actuated optical switch

 

作者: L. D. Partain,   J. C. Schultz,   G. F. Virshup,   M. Ladle Ristow,  

 

期刊: Applied Physics Letters  (AIP Available online 1990)
卷期: Volume 57, issue 18  

页码: 1840-1842

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.104033

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A Ga0.8In0.2As/GaAs thermally actuated optical switch has been demonstrated for unpolarized 1.08 &mgr;m light. Its measuredon:offcontrast ratio of 4.7 was produced electrically by changing the applied voltage from 0 to 3.2 V on a device with a 2.25‐&mgr;m‐thick Ga0.8In0.2As active layer. The ‘‘on’’ insertion loss was 3.8 dB. Theon:offchange in Ga0.8In0.2As absorption coefficient was 6660 cm−1. The switching current density was 9.7 A/cm2. The thermal switching energy can be supplied optically for an all‐optical switch.

 

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