The Schottky barrier height and ideality factor of Pt onp-type strained Si (grown on a graded relaxedSi0.82Ge0.18buffer layer) have been investigated in the temperature range (90–150 K) using the current-voltage characteristics and are found to be temperature dependent. While the ideality factor decreases with an increase in temperature, the barrier height increases. Simulation based on a drift-diffusion emission model has been used to explain the experimental results. ©1997 American Institute of Physics.