首页   按字顺浏览 期刊浏览 卷期浏览 Mott transition field effect transistor
Mott transition field effect transistor

 

作者: D. M. Newns,   J. A. Misewich,   C. C. Tsuei,   A Gupta,   B. A. Scott,   A. Schrott,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 73, issue 6  

页码: 780-782

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121999

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A field effect transistor fabricated with an oxide channel has been shown to demonstrate switching characteristics similar to conventional silicon metal oxide field effect transistors. This device is believed to operate via a Mott metal-insulator transition induced by the gate field, and offers a potential technology alternative for the regime beyond silicon scaling limitations. ©1998 American Institute of Physics.

 

点击下载:  PDF (56KB)



返 回