首页   按字顺浏览 期刊浏览 卷期浏览 Electronic structure of sodium atoms adsorbed on the GaAs(110) surface
Electronic structure of sodium atoms adsorbed on the GaAs(110) surface

 

作者: G. Allan,   M. Lannoo,   C. Priester,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 4  

页码: 980-984

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.584952

 

出版商: American Vacuum Society

 

关键词: SODIUM;ADSORPTION;GALLIUM ARSENIDES;SORPTIVE PROPERTIES;ELECTRONIC STRUCTURE;TIGHT BINDING APPROXIMATION;CORE LEVELS;ADATOMS;BINDING ENERGY;DANGLING BONDS;ENERGY−LEVEL DENSITY;GaAs:Na

 

数据来源: AIP

 

摘要:

The electronic structure of Na atoms adsorbed on the GaAs(110) surface is calculated in the tight‐binding approximation and the zero charge limit. For a monolayer and half a monolayer coverage, two different adsorption sites are considered. The surface atom and sodium core level shifts are calculated and compared to the experiment. The adatom binding energy is found to be maximum for adsorption on the surface Gallium dangling bonds. Finally the density of states and the interface state dispersion energy are compared with photoemission results.

 

点击下载:  PDF (351KB)



返 回