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Ferroelectric PbZr0.2Ti0.8O3thin films on epitaxial Y-Ba-Cu-O

 

作者: R. Ramesh,   A. Inam,   W.K. Chan,   B. Wilkens,   F. Tillerot,   T. Sands,   J.M. Tarascon,   J. Bullington,   J. Evans,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1992)
卷期: Volume 1, issue 2-4  

页码: 205-212

 

ISSN:1058-4587

 

年代: 1992

 

DOI:10.1080/10584589208215712

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Using a combination of pulsed laser deposition and sol-gel processing, we have fabricated epitaxial PbZr0.2Ti0.8O3/YBa2Cu3O7-x heterostructures on single crystalline [001] LaAlO3. Rutherford back-scattering studies show the composition to be the same as the nominal starting composition. Transmission electron microscopy shows the existence of a randomly oriented polycrystalline microstructure in the PZT layer with a grain size of about 500–1000Å. Microscopic pores were also observed in the PZT layer. The PZT film exhibits ferroelectric hysteresis with a saturation polarization of 22–25μC/cm2(at 7.5V, 1kHz), a remanence of 5–6μC/cm2and a coercive field of about 40kV/cm.

 

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