Ferroelectric PbZr0.2Ti0.8O3thin films on epitaxial Y-Ba-Cu-O
作者:
R. Ramesh,
A. Inam,
W.K. Chan,
B. Wilkens,
F. Tillerot,
T. Sands,
J.M. Tarascon,
J. Bullington,
J. Evans,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1992)
卷期:
Volume 1,
issue 2-4
页码: 205-212
ISSN:1058-4587
年代: 1992
DOI:10.1080/10584589208215712
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Using a combination of pulsed laser deposition and sol-gel processing, we have fabricated epitaxial PbZr0.2Ti0.8O3/YBa2Cu3O7-x heterostructures on single crystalline [001] LaAlO3. Rutherford back-scattering studies show the composition to be the same as the nominal starting composition. Transmission electron microscopy shows the existence of a randomly oriented polycrystalline microstructure in the PZT layer with a grain size of about 500–1000Å. Microscopic pores were also observed in the PZT layer. The PZT film exhibits ferroelectric hysteresis with a saturation polarization of 22–25μC/cm2(at 7.5V, 1kHz), a remanence of 5–6μC/cm2and a coercive field of about 40kV/cm.
点击下载:
PDF (1217KB)
返 回