Stress in thick diamond films deposited on silicon
作者:
Nobuko S. Van Damme,
Dennis C. Nagle,
Stephen R. Winzer,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 25
页码: 2919-2920
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104722
出版商: AIP
数据来源: AIP
摘要:
20‐&mgr;m‐thick diamond films deposited on Si single‐crystal substrates by microwave plasma‐enhanced chemical vapor deposition showed significant curvature. The internal stress distribution was estimated using the model of an elastic bimetallic strip. The results indicate that the films are under a mean tensile stress of 1.1 GPa, and are discussed using information from x‐ray diffraction and Raman spectra.
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