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Stress in thick diamond films deposited on silicon

 

作者: Nobuko S. Van Damme,   Dennis C. Nagle,   Stephen R. Winzer,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 58, issue 25  

页码: 2919-2920

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104722

 

出版商: AIP

 

数据来源: AIP

 

摘要:

20‐&mgr;m‐thick diamond films deposited on Si single‐crystal substrates by microwave plasma‐enhanced chemical vapor deposition showed significant curvature. The internal stress distribution was estimated using the model of an elastic bimetallic strip. The results indicate that the films are under a mean tensile stress of 1.1 GPa, and are discussed using information from x‐ray diffraction and Raman spectra.

 

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