首页   按字顺浏览 期刊浏览 卷期浏览 Annealing behaviour of defects in neutron transmutation doped silicon
Annealing behaviour of defects in neutron transmutation doped silicon

 

作者: X.T. Meng,   Stef. Charalambous,   M. Chardalas,   Sp. Dedoussis,   C.A. Eleftheriadis,   A.K. Liolios,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1995）
卷期: Volume 133, issue 1  

页码: 97-101

 

ISSN:1042-0150

 

年代: 1995

 

DOI:10.1080/10420159508225761

 

出版商: Taylor & Francis Group

 

关键词: Positron annihilation;n-transmutation;n-induced defects;annealing of Czochralski grown Si.

 

数据来源: Taylor

 

摘要:

Defect evolution in Neutron Transmutation Doped Czochralski-grown Si has been studied by positron annihilation and electrical measurements with respect to the annealing temperature up to 1100°C. Three annealing stages have been revealed depending on the annealing behaviour of vacancy and vacancy-impurity complexes.

 

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