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Focused ion beam microlithography using an etch‐stop process in gallium‐doped silicon

 

作者: P. H. La Marche,   R. Levi‐Setti,   Y. L. Wang,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 4  

页码: 1056-1058

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582675

 

出版商: American Vacuum Society

 

关键词: etching;lithography;silicon;doped materials;crystal doping;ion implantation;gallium ions;ion beams;fabrication;surface structure;orientation;sensitivity;collisions;ion collisions;kev range 10−100;ion microscopy;chemical vapor deposition;sensitivity

 

数据来源: AIP

 

摘要:

We have found that silicon, when implanted with doses of gallium in excess of 1013ions/cm2, experiences little or no etching in aqueous caustic solutions. By exploiting a finely focused 40–50 keV gallium ion beam (0.05–0.1 μm diameter) in our scanning ion microscope, we have shown that it is possible to fabricate structures with submicrometer (0.1 μm) features. The silicon behaves as a negative resist with a sensitivity of about 1 μC/cm2. This etch‐stop process is largely insensitive to crystallographic orientation, except for the highly insoluble (111) plane in which damage‐promoted etching occurs.

 

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