Monolithically integrated InGaAlAs dielectric reflectors for vertical cavity optoelectronic devices
作者:
W. Kowalsky,
J. Ma¨hnss,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 9
页码: 1011-1012
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106328
出版商: AIP
数据来源: AIP
摘要:
Monolithically integrated dielectric reflectors have opened up a new field of optoelectronic devices. Vertical cavity lasers in the AlGaAs system are grown by MBE almost as a matter of routine. In this contribution dielectric reflectors composed of InAlAs and InGaAlAs lattice matched to InP are investigated. We achieve reflectivities of 70%, 83%, and 96% using 5, 10, and 20 periods of quarter wavelength layers. Increasing the number to 30 periods results in a maximum reflectivity exceeding 99% at a center wavelength of 1.65 &mgr;m. These experimental results indicate that vertical cavity lasers for optical communication systems in the InGaAlAs system are feasible.
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