Deposition‐induced defect profiles in amorphous hydrogenated silicon
作者:
N. Hata,
S. Wagner,
P. Roca i Cabarrocas,
M. Favre,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 24
页码: 2448-2450
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102905
出版商: AIP
数据来源: AIP
摘要:
The thickness dependence of the subgap optical absorption in plasma‐deposited hydrogenated amorphous silicon is carefully studied by photothermal deflection spectroscopy. The deep‐level defect concentration decays from the top surface into the bulk where it approaches the thermal equilibrium defect density. This defect profile is interpreted in terms of the annealing, during growth, of growth‐induced surface defects. It is also shown that this defect profile is compatible with the known growth‐temperature dependence of the defect density in amorphous silicon.
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