Determination of Capture Cross Sections by Optical Quenching of Photoconductivity
作者:
Richard H. Bube,
Felix Cardon,
期刊:
Journal of Applied Physics
(AIP Available online 1964)
卷期:
Volume 35,
issue 9
页码: 2712-2719
ISSN:0021-8979
年代: 1964
DOI:10.1063/1.1713828
出版商: AIP
数据来源: AIP
摘要:
The electron capture cross section of sensitizing centers for photoconductivity has been measured as a function of temperature between 77° and 350°K in CdS, Cd(SSe), CdSe, GaAs, and InP crystals. The value of the cross section is obtained from the measurement of the minimum number of quenching photons per second required to initiate optical quenching, at a temperature below that at which thermal quenching occurs. Forty‐one determinations of cross‐section on nine different crystalline samples yield values between 10−20and 10−22cm2with only slight temperature dependence. A consideration of the various models to account for such small capture cross sections without appreciable temperature dependence suggests that the cross section is associated with radiative capture by a neutral center.
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