Electroluminescence in reverse‐biased ZnS:Mn Schottky diodes
作者:
N. T. Gordon,
M. D. Ryal,
J. W. Allen,
期刊:
Applied Physics Letters
(AIP Available online 1979)
卷期:
Volume 35,
issue 9
页码: 691-692
ISSN:0003-6951
年代: 1979
DOI:10.1063/1.91256
出版商: AIP
数据来源: AIP
摘要:
Electroluminescence in reverse‐biased ZnS:Mn Schottky diodes is reported. The characteristics are similar to those ZnSe:Mn LEDS’s described previously. Light emission results from the impact excitation of manganese luminescent centres by hot electrons in the depletion region. The characteristic field for impact excitation is 8×105V cm−1.
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