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Electroluminescence in reverse‐biased ZnS:Mn Schottky diodes

 

作者: N. T. Gordon,   M. D. Ryal,   J. W. Allen,  

 

期刊: Applied Physics Letters  (AIP Available online 1979)
卷期: Volume 35, issue 9  

页码: 691-692

 

ISSN:0003-6951

 

年代: 1979

 

DOI:10.1063/1.91256

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Electroluminescence in reverse‐biased ZnS:Mn Schottky diodes is reported. The characteristics are similar to those ZnSe:Mn LEDS’s described previously. Light emission results from the impact excitation of manganese luminescent centres by hot electrons in the depletion region. The characteristic field for impact excitation is 8×105V cm−1.

 

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