SrTiO3thin films have been grown on Si(100) substrates by pulsed laser deposition using an epitaxial TiN film as a buffer layer, and their structural and dielectric properties were investigated as functions of deposition parameters. X-ray diffraction analysis showed that theSrTiO3films were grown epitaxially in the wide range of substrate temperatures(400–650 °C)and ambient oxygen pressure(10−5 Torr–150mTorr) with an orientation relationship ofSrTiO3(100) // TiN(100) // Si(100) andSrTiO3⟨010⟩// TiN⟨010⟩// Si⟨010⟩. The crystallinity of the epitaxial films was improved with the increase of the substrate temperature and decrease of the ambient oxygen pressure, while the film surface morphology was degraded with increasing either of the two parameters. The relative dielectric constant of the films was revealed to depend both on the crystallinity and on the surface roughness of the films, the highest value of which was&Vegr;r=270at 1 MHz, comparable to that of bulkSrTiO3. ©1997 American Institute of Physics.