Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2layers using homogeneous nonavalanche injection of holes
作者:
A. V. Schwerin,
M. M. Heyns,
W. Weber,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 12
页码: 7595-7601
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345827
出版商: AIP
数据来源: AIP
摘要:
Homogeneous injection of holes into the gate oxide of metal‐oxide‐semiconductor (MOS) devices was obtained usingp‐channel MOS transistors under illumination conditions. Because gate hole currents could be measured the dependence of the hole trapping on the oxide electric field and on the energy of the holes at the injection point could be investigated. In contrast to results recently reported for electron injection no evidence for the generation of traps during hole injection was found. Only a small dependence of the capture cross section on the oxide field was observed. The study of the interface state generation during hole injection at various fields revealed that the amount of interface states directly generated by the injected holes is less than 5% of the number of trapped holes. For longer times a transformation process occurs and a correlation is found between the detrapping of holes and the generation of interface states.
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